ksp2222a npn epitaxial silicon transistor general purpose transistor collector-emitter voltage: v ceo = 40v collector dissipation: p c (max)=625mw absolute maximum ratings (t a =25 c ) refer ksp2222 for graphs electrical characteristics (t a =25 c ) * pulse test: pulse width 300 m s , duty cycle 2% characteristic symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current collector dissipation junction temperature storage temperature v cbo v ceo v ebo i c p c t j t stg 70 40 6 600 625 150 -55 ~ 150 v v v ma mw c c characteristic symbol test conditions min typ max unit collector-base breakdown voltage collector emitter breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current dc current gain * collector-emitter saturation voltage * base emitter saturation voltage current gain bandwidth product output capacitance turn on time turn off time noise figure bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) v be (sat) f t c ob t on t off nf i c =10 m a , i e =0 i c =10ma, i b =0 i e =10 m a , i c =0 v cb =60v, i e =0 v eb =3v, i c =0 i c =0.1ma, v ce =10v i c =1ma, v ce =10v i c =10ma, v ce =10v * i c =150ma, vce=10v * i c =500ma, v ce =10v i c =150ma, i b =15ma i c =500ma, i b =50ma i c =150ma, i b =15ma i c =500ma, i b =50ma i c =20ma, v ce =20v f=100mhz v cb =10v, i e =0, f=1mhz v cc =30v, i c =150ma i b1 =15ma, v be (off)=0.5v v cc =30v, i c =150ma i b1 =i b2 =15ma i c =100 m a , v ce =10v r s =i k w , f=1khz 75 40 6 35 50 75 100 40 300 0.01 10 300 0.3 1 1.2 2 8 35 285 4 v v v m a na v v v v mhz pf ns ns db to-92 1. emitter 2. base 3. collector ? 1999 fairchild semiconductor corporation rev. b
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